Wide dynamics require a fast readout CMOS image sensor. With the CCD image sensor, the user is limited to using 1/60s or 2x 1/30s even field synthesis. In the new wide dynamic technology, users can take long exposures of 1/30s images, use short exposures of 1/30s images, and then process the two images in real time to get an industrial-wide wide dynamic range. Image.
The following is an illustration:
There are also companies that are developing different methods to get HDR. One of them is called dynamic response pixel technology. This technology focuses on the DR inside the image, that is, adding different sensitivity to each pixel. The principle of this pixel is to have a large charging capacitor.
When the image is highlighted, the DCG switch is turned on and connected to the physical capacitance of the FD node. In this way, the large-capacity capacitor of the FD node enables the LCG mode, which can hold a large amount of signal charging (not overflowing). Under low illumination conditions, the DCG switch is turned off, disconnecting the capacitor connected to the FD junction, enabling the HCG mode, which uses additional analog gain inside the pixel. In this case, the FD capacitance depends only on the PN junction capacitance and the metal mutual coupling capacitance of the FD, which is much smaller than the physical capacitance structure. Fewer FD capacitor results increase conversion gain, increase sensitivity and reduce read noise at the expense of lowering the maximum charge holding capacitor.
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