LED backlight TV penetration rate is expected to grow to 65% in 2012

Last year, international manufacturers reduced the LED usage by reducing the brightness of the panel, which greatly reduced the price gap of LED CCFL backlights. Especially for LED CCFL backlight modules with 32-inch panel, the cost gap will be reduced to less than $10. It will help the panel factory to significantly transfer LED backlight specifications, and this year's LED TV penetration rate is expected to increase significantly.

In view of this year's new LED TV models, high-end models still mainly promote 3D functions, while entry models emphasize low prices, and equipped with LED backlights to stimulate consumers to buy gas, this year LED TV penetration rate is expected to grow to 65%.

Although the number of LEDs used in each TV has been greatly reduced, thanks to the price increase of new specifications and the growth of LED TV shipments, the output value of LEDs in TV backlight applications will reach 1.89 billion US dollars in 2012, with an annual growth rate of 32%. .

Under the resurgence of market demand, South Korea's Samsung and Japan's Sharp and other major TV brand factories are also actively launching new models. It is expected to be launched in March. Under the sprint of major brand factories, Dongbei and Yuyuan Q1 will take orders. Not weak, especially Dongbei, the current order status is better than expected, the company is also optimistic about the performance, it is estimated that Q1 performance will be in the off-season.

Metal oxide semiconductor field effect (MOS) transistors can be divided into N-channel and P-channel. P-channel silicon MOS field-effect transistors have two P+ regions on the N-type silicon substrate, which are called source and The drain is not conductive between the two poles, and when a sufficient positive voltage (gate ground) is applied to the source, the surface of the N-type silicon under the gate exhibits a P-type inversion layer, which becomes a channel connecting the source and the drain. . Changing the gate voltage changes the density of the holes in the channel, thereby changing the resistance of the channel. Such a MOS Field Effect Transistor is called a P-channel enhancement type field effect transistor. If the surface of the N-type silicon substrate is free of gate voltage, the P-type inversion layer channel already exists, and the appropriate bias voltage can increase or decrease the resistance of the channel. Such a MOS field effect transistor is referred to as a P-channel depletion field effect transistor. They are collectively referred to as PMOS transistors.

P Channel Mosfet

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