Blaise Mouttet from Arlington, Virginia, USA, earlier in arXiv. A paper was published at org under the title 'Memresistors and non-memristive zero-crossing hysteresis curves', which aims to prove that in addition to the definition of so-called two-end point memory elements and memristors that generate a zero-crossing hysteresis curve, There are many dynamic systems.
At the outset of this article, it is straightforward: “The definition of the zero-crossing tight hysteresis curve for the memristor by circuit theorist Leon Chua is wrong.â€
Blaise Mouttet dismisses the claim that the memristor is the fourth basic circuit element after resistance, capacitance, and inductance. He believes that this explanation is not correct and that the memory elements being developed in the HP lab are actually It is not a memristor, but more like a part of a wider range of variable resistance systems.
The memristor theory was first proposed by Leon Chua of the University of Berkeley in 1971 (The missing circuit element “IEEE Trans. Circuit Theory CT-18, 507-519 (1971)) in an attempt to define a basic non- Linear circuit elements, the presence and behavior of such circuit elements can all be covered by electromagnetic theory, and since 2008, HP has developed metal oxide resistive RAM technology in the name of a memristor.
Mouttet also presented papers at the 2010 International Symposium on Circuits and Systems (ISCAS), refuting that HP Labs' memory components are not memristors, and claimed that it truly owns TiO2 resistive memory based on the United States. The company's patent (U.S. Patent 7,417,271) is Samsung, not Hewlett-Packard.
After publishing the paper on arXiv, Mouttet and many researchers discussed the physical properties of non-volatile memory components through e-mail.
Some of the e-mail arguments are in favor of Mouttet's assertion that any two end point elements that attempt to pass current through a component when the resistance can be changed are defined as memristors, which is not helpful for understanding complex areas with many different types of components.
These different components include resistive RAM (RRAM or ReRAM), phase change memory (PCM) or phase change RAM (PCRAM), conductive bridging RAM (CBRAM), ferroelectric RAM (FRAM), and iron using organic materials. Electrode memory.
Mouttet also has a nanotechnology blog called TinyTechIP.
At the outset of this article, it is straightforward: “The definition of the zero-crossing tight hysteresis curve for the memristor by circuit theorist Leon Chua is wrong.â€
Blaise Mouttet dismisses the claim that the memristor is the fourth basic circuit element after resistance, capacitance, and inductance. He believes that this explanation is not correct and that the memory elements being developed in the HP lab are actually It is not a memristor, but more like a part of a wider range of variable resistance systems.
The memristor theory was first proposed by Leon Chua of the University of Berkeley in 1971 (The missing circuit element “IEEE Trans. Circuit Theory CT-18, 507-519 (1971)) in an attempt to define a basic non- Linear circuit elements, the presence and behavior of such circuit elements can all be covered by electromagnetic theory, and since 2008, HP has developed metal oxide resistive RAM technology in the name of a memristor.
Mouttet also presented papers at the 2010 International Symposium on Circuits and Systems (ISCAS), refuting that HP Labs' memory components are not memristors, and claimed that it truly owns TiO2 resistive memory based on the United States. The company's patent (U.S. Patent 7,417,271) is Samsung, not Hewlett-Packard.
After publishing the paper on arXiv, Mouttet and many researchers discussed the physical properties of non-volatile memory components through e-mail.
Some of the e-mail arguments are in favor of Mouttet's assertion that any two end point elements that attempt to pass current through a component when the resistance can be changed are defined as memristors, which is not helpful for understanding complex areas with many different types of components.
These different components include resistive RAM (RRAM or ReRAM), phase change memory (PCM) or phase change RAM (PCRAM), conductive bridging RAM (CBRAM), ferroelectric RAM (FRAM), and iron using organic materials. Electrode memory.
Mouttet also has a nanotechnology blog called TinyTechIP.
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