Next-generation ReRAM flash memory chips

Nikkei News reported that Sharp is teaming up with Elpida to develop next-generation ReRAM variable-resistive flash memory chips, which are expected to reach volume production in 2013.

As early as 2007, Fujitsu announced that it has developed such a variable-resistance flash memory chip, which can reduce the power consumption and write speeds up to 10,000 times that of current NAND flash memory chips used in mobile phones.

Nikkei said that devices using the ReRAM chip can download a high-definition movie in a matter of seconds, and the power consumption in standby mode is almost zero.

In addition to Sharp and Elpida, Japan Industrial Technology Research Institute, the University of Tokyo and other chip equipment manufacturers will also join the research and development work. The chip will be mass-produced as early as 2013, and Elpida will probably be responsible for this production.

In addition, other competitors are also actively developing new types of memory chips. Toshiba is developing a layered structure flash memory chip; in addition to R&D of ReRAM, development of phase-change memory chips and magnetic memory chips is also underway. in.

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